Anomalous electron transport in high power impulse magnetron sputtering

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Cross-field ion transport during high power impulse magnetron sputtering

In this study, the effect on thin film growth due to an anomalous electron transport, found in high power impulse magnetron sputtering (HiPIMS) has been investigated for the case of a planar circular magnetron. An important consequence of this type of transport is that it affects the way ions are being transported in the plasma. It was found that a significant fraction of ions are transported r...

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High power impulse magnetron sputtering discharge

J. T. Gudmundsson, N. Brenning, Daniel Lundin and Ulf Helmersson, High power impulse magnetron sputtering discharge, 2012, Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, (30), 030801. http://dx.doi.org/10.1116/1.3691832 Copyright: American Vacuum Society, This article may be downloaded for personal use only. Any other use requires prior permission of the author and the ...

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Understanding deposition rate loss in high power impulse magnetron sputtering

The lower deposition rate for high power impulse magnetron sputtering (HiPIMS) compared to direct current magnetron sputtering for the same average power is often reported as a drawback. The often invoked reason is back-attraction of ionized sputtered material to the target, due to a substantial negative potential profile from the location of ionization towards the cathode. Emitting and swept L...

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Plasma properties in high power impulse magnetron sputtering

.....................................................................................................I PREFACE.......................................................................................................III PAPERS INCLUDED IN THE THESIS ........................................................... V RELATED PUBLICATIONS NOT INCLUDED IN THE THESIS.................... VI ACKNOWLEDGEMENTS ...

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Energy flux measurements in high power impulse magnetron sputtering

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ژورنال

عنوان ژورنال: Plasma Sources Science and Technology

سال: 2008

ISSN: 0963-0252,1361-6595

DOI: 10.1088/0963-0252/17/2/025007